PART |
Description |
Maker |
3DD102B |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min.)
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Inchange Semiconductor ...
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MAX692 MAX692CPA MAX692EJA MAX692EPA MAX692MJA MAX |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-CFP -55 to 125 微处理器监控电路 IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:1.2kV; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:1140W; Package/Case:Module; C-E Breakdown Voltage:1200V From old datasheet system POWER SUPPLY SUPERVISOR,CMOS,DIP,16PIN,PLASTIC Microprocessor Supervisory Circuits
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Maxim Integrated Produc... Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] Maixm Maxim Integrated Products Inc MAXIM - Dallas Semiconductor
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CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
Q62702-C1659 BCX41 BSS64 Q62702-S535 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
2SC5026 |
Silicon NPN Epitaxial Planar Type Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
2SB1073 |
Low collector-emitter saturation voltage VCE(sat) Large peak collector current ICP
|
TY Semiconductor Co., Ltd
|
SMBTA1407 |
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage
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http://
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DS1393U-18 DS1392U-33 DS1393U-33 DS1390 DS1390U-3 |
RIBBON CABLE, 40WAY, PER M; Cores, No. of:40; Conductor make-up:7/36AWG; Wire size, AWG:28AWG; Impedance:119R; Pitch:1.27mm; Voltage rating, AC:50V; Colour:Grey; Capacitance:70.5pF/m; Approval Bodies:UL; Approval category:Style RoHS Compliant: Yes Low-Voltage SPI/3-Wire RTCs with Trickle Charger 1 TIMER(S), REAL TIME CLOCK, PDSO10 IGBT Module; Continuous Collector Current, Ic:200A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:1500W; Collector Current:200A; Collector Emitter Voltage, Vceo:1.2kV; Leaded Process Compatible:No RoHS Compliant: No
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Maxim Integrated Produc... Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC MAXIM - Dallas Semiconductor
|
BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管(高击穿电压低集电极发射极饱和电压) Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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PC895 PC875 PC865 |
From old datasheet system High Sensitivity, Low Collector Dark Current, High Collector-emitter Voltage Type Photocoupler
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SHARP[Sharp Electrionic Components]
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