PART |
Description |
Maker |
KA2139 |
Tantalum Molded High Capacitance Capacitor; Capacitance: 10uF; Voltage: 16V; Packaging: Tape & Reel 三通道RGB视频放大 3 CHANNEL R.G.B VIDEO AMPLIFIER
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Samsung Semiconductor Co., Ltd. Samsung Electronic
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BB814 BB814-1 BB814-2 |
Small signal capacitance diode for frequency tuning in FM radio tuners Silicon Epitaxial Planar Dual Capacitance Diode From old datasheet system
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Vishay Telefunken Vishay Siliconix
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GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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MICROSEMI CORP-LOWELL Microsemi Corporation
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MMVL105GT1 ON2289 |
VOLTAGE VARIABLE CAPACITANCE DIODE 2.15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE From old datasheet system
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Leshan Radio Company, Ltd. ONSEMI[ON Semiconductor]
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AD6432 AD6432AST |
GSM 3 V Transceiver IF Subsystem Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Series:20110; Packaging:Cut Tape TELECOM, CELLULAR, BASEBAND CIRCUIT, PQFP44
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Analog Devices, Inc.
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BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB From old datasheet system
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NXP Semiconductors N.V. Philipss Philips Semiconductors
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SA57031-XX SA57031-25 SA57031-26 SA57031-31 SA5703 |
Micropower 150 mA, low-noise, low dropout linear regulator with on/off 微功耗为150 mA,低噪声,低压差线性稳压器的开/ RECTIFIER BRIDGE 25A 800V 300A-ifsm 1.1V-vf 5uA-ir GBPCW 100/TRAY CAP CERAMIC MONO .1UF 50V 10% Ceramic Multilayer Capacitor; Capacitance:22pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:1.2pF; Capacitance Tolerance: 0.5pF; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0603; Termination:SMD RoHS Compliant: Yes Ceramic Multilayer Capacitor; Capacitance:1.5pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor Ceramic Multilayer Capacitor; Capacitance:1pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
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TE Connectivity, Ltd. NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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HVU355B |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
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Renesas Electronics Corporation
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HVU17 |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
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Renesas Electronics Corporation
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G8605-25 G8605 G8605-11 G8605-12 G8605-13 G8605-15 |
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 420V; Case Size: 30x40 mm; Packaging: Bulk 铟镓砷PIN光电二极 Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 25x35 mm; Packaging: Bulk 铟镓砷PIN光电二极 Aluminum Snap-In Capacitor; Capacitance: 680uF; Voltage: 420V; Case Size: 35x50 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 30x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 420V; Case Size: 30x45 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 420V; Case Size: 35x30 mm; Packaging: Bulk InGaAs PIN photodiode
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Hamamatsu Photonics K.K. HAMAMATSU[Hamamatsu Corporation]
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