PART |
Description |
Maker |
ISPLSI2064VL-100LB100 ISPLSI2064VL-100LJ44 ISPLSI2 |
2.5V In-System Programmable SuperFAST?High Density PLD 2.5V In-System Programmable SuperFAST?/a> High Density PLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD Turns Counting Dial; Number of Turns:10; Knob/Dial Style:Round Skirted With Indicator Line; Body Material:Aluminum; Shaft Size:1/4; Color:Satin RoHS Compliant: Yes EE PLD, 10 ns, PQFP100 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP100 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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MCN51-8S3-PFA MCN51-16P2-DS MCN51-16P2-PFA MCN51-1 |
CAP 0.1UF 50V 20% Z5U RAD.20 .20X.20 BULK 高电流,高密度,电源连接 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高电流,高密度,电源连接 High Current, High Density, Power Connectors 高电流,高密度,电源连接 High Current / High Density / Power Connectors
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HIROSE ELECTRIC Co., Ltd. Hirose Electric USA, INC. HIROSE[Hirose Electric]
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ISPLSI2032VE ISPLSI2032VE-110LB49 ISPLSI2032VE-110 |
225 MHz 3.3V in-system prommable superFAST high density PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST PLD IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.3 IC,Normally-Closed Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 EE PLD, 13 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 13 ns, PQFP44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 6 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD 3.3在系统可编程高密度PLD的超快⑩ 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
STW80N06-10 4868 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
DR127-100-R DR127-150-R DR127-101-R DR127-102-R DR |
High power density, high efficiency, shielded inductors
|
List of Unclassifed Man...
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
SD20-XXX |
High Power Density
|
Cooper Electronic
|
HDS800 HDS800PS15 HDS800PS24 HDS800PS30 HDS800PS36 |
1U Profile, High Power Density
|
XP Power Limited
|
SCF10000 SCF5000 SCF7500 SCF12500 SCF2500 |
High Voltage,High Density Fast Recovery Rectifier(反向电压2500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压12500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压7500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压10000V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压5000V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
|
Semtech Corporation
|
MVAC250-12AFD MVAC250-12F MVAC250-24AFD MVAC250-24 |
250W High Density AC/DC Power Supply
|
Murata Manufacturing Co., Ltd.
|
MVAC250-24AFD MVAC250-12AFD MVAC250-48AFD MVAC250- |
250W High Density AC-DC Power Supply
|
Murata Manufacturing Co., Ltd.
|
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