| PART |
Description |
Maker |
| STP33N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STW65N65DM2AG |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| P650-U260-WH P650-U180-WH P850-U180-WH P850-U260-W |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| AP2121AK-1.5TRE1 AP2121AK-2.5TRE1 AP2121AK-2.8TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCDSEMI
|
| CES2301 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AMS2301A |
Super high density cell design for extremely low
|
Advanced Monolithic Systems Ltd
|
| CES2305 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AP2122AK-3.0TRG1 AP2122AK-3.3TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| EKL |
Aluminum Electrolytic Capacitors, Radial Style, Polarized AI Electrolytic Capacitor, Extremely Long Lifetime, High Temp Range (125°C), High AC Rating
|
Vishay
|
| CMPTA96 |
SURFACE MOUNT PNP SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
