PART |
Description |
Maker |
FQD10N20 FQU10N20 FQP10N20 FQ10N20 FQD10N20TM FQU1 |
200V N-Channel MOSFET CAP 3900PF 50V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 200 N-Channel MOSFET 200V N-Channel QFET
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] http://
|
IRC630 IRC |
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A) Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A) 200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
FQU7N20 FQD7N20 FQD7N20TF FQD7N20TM FQU7N20TU |
200V N-Channel MOSFET 200V N-Channel QFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFM220B IRFM220BTFFP001 IRFM220BD84Z |
1.13 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET 200V N-Channel MOSFET 200V N-Channel B-FET / Substitute of IRFM220A
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
|
IRF240SMD |
N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))
|
SemeLAB SEME-LAB[Seme LAB] Air Cost Control
|
STD5NB20 6365 |
N - CHANNEL 200V - 0.70ohm - 5A DPAK PowerMESHO MOSFET From old datasheet system N - CHANNEL 200V - 0.70 - 5A DPAK PowerMESH TM MOSFET N - CHANNEL 200V - 0.70 Ohm - 5A DPAK PowerMESH MOSFET
|
STMicroelectronics SGS Thomson Microelectronics
|
IRFV260 IRFV260-15 |
Simple Drive Requirements 200V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
|
International Rectifier
|
FQB34N20L FQI34N20L FQB34N20LTMSB82076 FQB34N20LTM |
200V LOGIC N-Channel MOSFET 31 A, 200 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 200V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FQB5N20L FQI5N20L FQI5N20 FQI5N20LTU |
200V LOGIC N-Channel MOSFET 4.5 A, 200 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA 200V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
STY100NS20FD 7739 |
N-CHANNEL Power MOSFET N-CHANNEL 200V 0.022 OHM 100A ISOTOP MESH OVERLAY MOSFET From old datasheet system N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY⑩ Power MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
IRF637 IRFP256 IRFP257 IRFP242R IRF230R IRFP240R I |
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 6.5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 23A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 21A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 500MA I(D) | TO-250VAR TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 400MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 18A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 8A条(丁)|04AA TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 8A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 5A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 33A I(D) | TO-247 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|3A条(丁)|47 TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 22A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 275V五(巴西)直| 22A条(丁)|04AA
|
ECM Electronics, Ltd. Fairchild Semiconductor, Corp.
|