PART |
Description |
Maker |
W981616BH |
SDRAM 1Mx16 512K ′ 2 BANKS ′ 16 BITS SDRAM
|
Winbond Electronics
|
W9816G6CH W9816G6CH-5 W9816G6CH-6 W9816G6CH-7 |
512K 】 2 BANKS 】 16 BITS SDRAM
|
Winbond
|
W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I |
1M × 4 BANKS × 16 BITS SDRAM 1M 4 BANKS 16 BITS SDRAM 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54
|
Winbond Electronics Corp http:// Winbond Electronics, Corp.
|
K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
IS42S32200-6T IS42S32200-7TI IS42S32200-6TI IS42S3 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc. Integrated Silicon Solu...
|
IS42S32200C1-6BL IS42S32200C1-6T IS42S32200C1-6TI |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
IS42S32200B-6T IS42S32200B-6TI IS42S32200B-6TL IS4 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution Inc
|
W9812G6JH |
2M X 4 BANKS X 16 BITS SDRAM
|
Winbond
|
W9864G6JT-6I W9864G6JT-6A W9864G6JT-6K |
1M x 4 BANKS x 16 BITS SDRAM
|
Winbond
|
W9864G6GH |
1M X 4 BANKS X 16 BITS SDRAM
|
Winbond
|