| PART |
Description |
Maker |
| EN1719 |
Bipolar Transistor, 10V, 3A, Low VCE(sat), NPN Single PCP
|
ON Semiconductor
|
| IRG4RC10SD IRG4RC10SDTR IRG4RC10SDTRL IRG4RC10SDTR |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| TIP29D TIP29E TIP29F |
TRANS 10V 5W SA10C BIPOLAR GCI
NPN SILICON POWER TRANSISTORS
|
Power Innovations International, Inc.
Power Innovations Limited
POINN[Power Innovations Ltd]
|
| EN3096A 2SC4489T-AN |
Bipolar Transistor
Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
| STRS6707 STR-S6707 STR-S6708 STR-S6709 TRS6707 STR |
OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电5A，输出功率直20W50V输出，带双极开关晶体管的脱线开关稳压器)
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电2A，输出功率直20W50V输出，带双极开关晶体管的脱线开关稳压器)
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| P8-SC-111 P8-PC-111 P8-20P-C QR_P8-20P-C QR_P8-20P |
Ultra-small Rectangular Multi-electrode solderless Connectors for Rack and Panel Applications
CAP CER 56PF 50V C0G 5% 0402
CAP CER 1500PF 10V SL 5% 0402
CAP CER 1800PF 10V SL 5% 0402
CAP CER 2200PF 10V SL 5% 0402
CAP CER 2700PF 10V SL 5% 0402
CAP CER 3300PF 10V SL 5% 0402
CAP CER 47PF 50V C0G 5% 0402
CAP CER 39PF 50V C0G 5% 0402
CAP CER 3900PF 10V SL 5% 0402 超小型矩形多电极焊机架和面板连接器的应用
CAP CER 68PF 50V C0G 5% 0402 超小型矩形多电极焊机架和面板连接器的应用
CAP CER 33PF 50V C0G 5% 0402 超小型矩形多电极焊机架和面板连接器的应用
|
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| 2SC5245A |
RF Transistor, 10V, 30mA, fT=8GHz, NPN Single MCP
|
ON Semiconductor
|
| AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-310 |
TERM BLOCK HDR 5.08MM 3POS PCB
Low Current/ High Performance NPN Silicon Bipolar Transistor
Low Current High Performance NPN Silicon Bipolar Transistor
Low Current, High Performance NPN Silicon Bipolar Transistor
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| CT30SM-12 CT30SM-1 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER UPS USE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
GENERAL INVERTER . UPS USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
