| PART |
Description |
Maker |
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M5M5W816TP-55HI M5M5W816TP-85HI M5M5W816TP-70HI |
Memory>Low Power SRAM
(M5M5W816TP-55HI/70HI/85HI) CMOS STATIC RAM
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor
RENESAS[Renesas Electronics Corporation]
|
| IS61LV6416 IS61LV6416-10 IS61LV6416-10B IS61LV6416 |
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY 64K的16高速CMOS静态RAM.3 V电源
ASYNCHRONOUS STATIC RAM
|
ETC
ICSI[Integrated Circuit Solution Inc]
|
| TC55V16648BBFT-10 TC55V16648BBFT-12 TC55V16648BBFT |
65,536-WORD BY 16-BIT CMOS STATIC RAM 65,536字由16位的CMOS静态RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| STK11C68 STK11C68-C20 STK11C68-C20I STK11C68-C25 S |
8K x 8 nvSRAM QuantumTrapCMOS Nonvolatile Static RAM 8K的8非易失QuantumTrap⑩的CMOS非易失性静态随机存储器
8K x 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM
8K x 8 nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM
8K x 8 nvSRAM QuantumTrap?/a> CMOS Nonvolatile Static RAM
|
Electronic Theatre Controls, Inc.
Simtek
ETC[ETC]
List of Unclassifed Manufacturers
|
| M5M532R16J-10 M5M532R16J-12 M5M532R16J-15 M5M532R1 |
0.5 in Diameter, 200mA Single Deck Rotary Switch
From old datasheet system
524288-BIT CMOS STATIC RAM
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| GLT7256L08-10J3 GLT7256L08-10TS GLT7256L08-12J3 GL |
10ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
12ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
15ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
8ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
|
G-LINK Technology
|
| IS61C3216 IS61C3216NBSP IS61C3216-20TI IS61C3216-1 |
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K的16 HIGH-SPEED的CMOS静态RAM
ASYNCHRONOUS STATIC RAM
|
Integrated Silicon Solution, Inc.
ICSI[Integrated Circuit Solution Inc]
|
| W24257A W24257 |
32K*8HIGH SPEED CMOS STATIC RAM
32K*8CMOS STATIC RAM
From old datasheet system
|
Winbond
|
| IS62LV12816LL IS62LV12816L IS62LV12816L-55B IS62LV |
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
