PART |
Description |
Maker |
K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V 512Mb/256Mb 1.8V NAND Flash Errata 64M x 8 bit NAND flash memory, 1.70 - 1.95V 32M x 16 bit NAND flash memory, 2.7 - 3.6V 32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
AT49F8011-70CI AT49F8011-90CI AT49F8011T-90CC AT49 |
ATS-SSK 0525/110 Quadruple 2-Input Positive-NAND Gate 14-SO -40 to 85 Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 125 Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125 8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PBGA48 8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Atmel Corp. Atmel, Corp.
|
K9WAG08U1A-I K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P |
2G X 8 FLASH 2.7V PROM, 20 ns, PDSO48 4G X 8 FLASH 2.7V PROM, 30 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
|
SEMIKRON http:// Samsung semiconductor
|
MT29F8G08AAAC4 MT29F8G08AAAC6 MT29F16G08DAAWP |
NAND Flash Memory
|
Micron
|
MT29F8G08ABCBB |
NAND Flash Memory
|
Micron
|
MT29F4G08AAA |
NAND Flash Memory
|
Micron
|
MT29F2G08AACWP MT29F4G08BACWP MT29F8G08FACWP |
NAND Flash Memory
|
Micron Technology
|
KM29U64000T KM29U64000IT |
8M x 8 Bit NAND Flash Memory
|
Samsung Electronic
|
HY27UH088G2M HY27UH088GDM |
8G-Bit NAND Flash Memory
|
Hynix Semiconductor
|
K9F6408U0M-TCB0 K9F6408U0M-TIB0 |
8M x 8 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9F6408U0C-V |
8M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|