PART |
Description |
Maker |
SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
CPD41 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
1N4148 |
SMALL SIGNAL SWITCHING DIODE Fast Switching Diode
|
Chenyi Electronics Comchip Technology
|
CPD4110 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
CPD91 |
Switching Diode Low Leakage Switching Diode Chip
|
Central Semiconductor Corp
|
CPD91V |
Switching Diode Low Leakage Switching Diode Chip
|
Central Semiconductor Corp
|
CPD80V10 |
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
CPD83V10 |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Siemens Semiconductor Group
|
Q67040S4714 IKP04N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
SMBD2835 SMBD2836 Q68000-A8436 Q68000-A8547 |
Silicon Switching Diode Array 0.25 A, 2 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system Silicon Switching Diode Array with co...
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|