| PART |
Description |
Maker |
| STRH40N6S1 STRH40N6SG |
Rad-Hard N-Channel 60V - 35A MOSFET
|
ST Microelectronics
|
| 35SCGQ060 |
35A 60V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package
|
International Rectifier
|
| SBT350-06L |
Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 60V, 35A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 60V, 35A Rectifier
|
Sanyo Semicon Device
|
| RJK0656DPB-00-J5 |
60V, 40A, 5.6m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| GBPC3501W GBPC3510W GBPC35005 GBPC35005W GBPC3501 |
600V; 35A glass passivated bridge rectifier
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 35 Amperes)
Dual Audio Operational Amplifier 8-TSSOP -40 to 85 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
35A GLASS PASSIVATED BRIDGE RECTIFIER 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
Pan Jit International Inc.
DIODES[Diodes Incorporated]
Diodes, Inc.
|
| BYP58-800 BYP57 BYP57-100 BYP57-150 BYP57-200 BYP5 |
35 A, 200 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 700 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 150 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 75 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35A Silicon Power Rectifier Diode 35 A, 150 V, SILICON, RECTIFIER DIODE
35A Silicon Power Rectifier Diode 35 A, 75 V, SILICON, RECTIFIER DIODE
35A Silicon Power Rectifier Diode 35 A, 500 V, SILICON, RECTIFIER DIODE
|
Diodes, Inc.
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| RJK03E9DPA RJK03E9DPA-00-J5A |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| BP35-005 BP35-01 BP35-02 BP35-04 BP35-06 BP35-08 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| FR3501 |
(FR3501 - FR3510) 35A Plastic Silicon Automotive Rectifiers
|
FCI Semiconductor
|
