| PART |
Description |
Maker |
| RJK0854DPB-00-J5 |
80V, 25A, 13 m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| MIP0210SP |
ISOLATOR 3P 25AISOLATOR 3P 25A; Poles, No. of:3; Current rating:25A; Configuration, contact:1 N/O 1 N/C; Depth, external:169mm; IP rating:IP55; Length / Height, external:174mm; Material:Steel; Power, switching AC3 max:5.5kW; Width,
Silicon MOS IC
|
PANASONIC CORP
Panasonic Semiconductor
|
| MIT-5A117 |
ISOLATOR, FLUSH 25A 3 POLEISOLATOR, FLUSH 25A 3 POLE; Poles, No. of:3; Current rating:25A; Approval Bodies:UL, CSA; IP rating:IP55; Power, switching AC3 max:2.2kW; Switch function type:Triple Pole 开槽光电断路器
SLOTTED PHOTOINTERRUPTER
|
Unity Opto Technology Co., Ltd.
|
| UTT25N08G-TN3-R UTT25N08G-TN3-T UTT25N08L-TN3-T UT |
25A, 80V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| RJK0853DPB13 RJK0853DPB-00-J5 RJK0853DPB-15 |
80V, 40A, 8.0m max. Silicon N Channel Power MOS FET Power Switching
80V, 40A, 8.0m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| HIP408206 HIP4082IPZ HIP4082 HIP4082IB HIP4082IBZ |
80V, 1.25A Peak Current H-Bridge FET Driver
|
INTERSIL[Intersil Corporation]
|
| RJK0851DPB-00-J5 RJK0851DPB-13 |
80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| HIP4086AABZ HIP4086ABZ HIP4086ABZT |
80V, 500mA, 3-Phase MOSFET Driver 1.25A peak turn-off current
80V/0.5A Peak Three Phase Driver; Temperature Range: -25°C to 85°C; Package: 24-SOIC T&R 1.1 A HALF BRDG BASED MOSFET DRIVER, PDSO24
|
Intersil Corporation
|
| BD535K BD536J BD534K BD538K BD538J BD534 BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE.
50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE.
; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA
; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A
; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
|
Continental Device India Limited
|
| CDSV6-4448SD-G CDSV6-4448AD-G CDSV6-4448TI-G |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=100mA
|
Comchip Technology
|
