| PART |
Description |
Maker |
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MCH6613 |
Power MOSFET 30V, 0.35A, 3.7Ohm,-30V, -0.2A, 10.4Ohm, Complementary Dual MCPH6
|
ON Semiconductor
|
| RJK03N4DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FDD068AN03L FDU068AN03L FDD068AN03 |
N-Channel PowerTrench MOSFET 30V/ 35A/ 6.8m
N-Channel PowerTrench MOSFET 30V, 35A, 6.8mз
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| ZXMN3A01 ZXMN3A01F ZXMN3A01FTA ZXMN3A01FTC |
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 35A-ifsm 0.875V-vf 25ns 2uA-ir DO-41 5K/REEL-13
30V N-CHANNEL ENHANCEMENT MODE MOSFET
|
ZETEX[Zetex Semiconductors]
|
| XC9250B083QR-G XC9251 |
30V Driver Transistor Built-In Step-Down DC/DC Converters
|
Torex Semiconductor
|
| FMC7G20US60 |
IGBT
Compact & Complex Module
Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRF3708 IRF3708L IRF3708S |
Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条）
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| DTD743XE11 DTD743XM |
200mA / 30V Low VCE (sat) Digital transistors(with built-in resistors)
|
Rohm
|
| DTD743XE DTD743XM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTB743ZM DTB743ZE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
