| PART |
Description |
Maker |
| TGF2023-10-15 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-02 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGA2579-FL TGA2579-FL-15 |
25 Watt Ku-Band GaN Power Amplifier
|
TriQuint Semiconductor
|
| 1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies
UHV240-KH/AS
PTSA 0.5/ 9-2.5-Z
Discrete POWER & Signal Technologies 分立功率
1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器（功500瓦的瞬变电压抑制器）
1500 Watt Transient Voltage Suppressors(???500???????靛??????
Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
http://
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| QPA1001-EVB |
3.1 ?3.5 GHz 60 Watt GaN Power Amplifier
|
TriQuint Semiconductor
|
| AM42-0054 |
1 Watt / 2 Watt L-Band Power Amplifier 1.435 - 1.525 GHz
|
Tyco Electronics
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| GP2001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| GP1001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
