PART |
Description |
Maker |
1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V,最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电3V,最大反向电流降.01μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电12V的,最大反向电.05μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电14V的,最大反向电.05μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V,最大反向电.8μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V,最大反向电0μA的硅外延平面型齐纳二极管) PC 5/10-G-7,62 PCV 5/ 4-G-7,62 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V,最大反向电0μA的硅外延平面型齐纳二极管) From old datasheet system Silicon Epitaxial Planar Z?Diodes
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Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken]
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UPC2903 UPC2906 UPC2908 UPC2909 UPC2912 UPC2905 UP |
Low saturation three-terminal positive output voltage stabilization power supply
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NEC
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LC25W4532EBJ28 LC25W4532CBJ28 LC25EW4532EBJ28 LC25 |
2.5Gb/s Buried Het Laser 360km Extended Reach With Optional Etalon Stabilization
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Bookham, Inc.
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POWERCURRENTSENSERESISTORS |
Z-Based Bulk Metal? Foil Technology Rapid ΔR Stabilization - Low WCR - Low TCR
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Vishay
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KS7333 KSC7333 S5C7333A |
Digital Image Stabilization and Digital Zoom Processor
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SAMSUNG[Samsung semiconductor] Samsung Electronic
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AT73C203 |
Power Management IC for Datacom Platforms 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PBGA100 The AT73C203 is a low-cost, ultra low-power, power and battery management IC designed to interface directly with portable and hand-held applications built around microprocessors requiring smart power management functions. It includes all r
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Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
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RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... 2.4-2.5 GHz Power Amplifier From old datasheet system 2.4?2.5 GHz Power Amplifier Single-band power amplifiers 2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
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ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc] ANADIGICS Inc ANADIGICS, Inc.
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TA8263BH TA8263 |
Max Power 43 W BTL 4 ch Audio Power IC Max Power 43 W BTL ??4 ch Audio Power IC Max Power 43 W BTL 】 4 ch Audio Power IC IC,AUDIO AMPLIFIER,QUAD,BIPOLAR,ZIP,25PIN,PLASTIC Max Power 43 W BTL × 4 ch Audio Power IC Max Power 43 W BTL x 4 ch Audio Power IC
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Toshiba Semiconductor
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AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET HEXFET庐 Power MOSFET HEXFET? Power MOSFET 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra Low On-Resistance
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International Rectifier List of Unclassifed Man...
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