| PART |
Description |
Maker |
| VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG361 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| VG3617801BT-8H |
16Mb CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor Corporation
|
| MB8504S072AC-84 |
CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×72同步动态RAM)
|
Fujitsu Limited
|
| MB85396A-60 MB85396A-70 |
CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36同步动态RAM) 4米36Bit的CMOS同步动态随机存取存储器（SDRAM）的CMOS分36位同步动态RAM）的
|
Fujitsu, Ltd.
|
| MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM)
2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| HY57V161610ET-7I HY57V161610ET-10I HY57V161610ET-1 |
SDRAM - 16Mb
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY57V161610FTP-XX HY57V161610FT-XX HY57V161610FT-5 |
16M SDRAM
16Mb Synchronous DRAM
|
Hynix Semiconductor
|
| KMM53616000CK |
16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1
|
Samsung Semiconductor
|
| KMM53632004BK |
32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
|
Samsung Semiconductor
|
| MSC23S4721E-8BS18 MSC23S4721E |
4,194,304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
4194304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
From old datasheet system
4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字2位同步动态RAM模块)
4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字72位同步动态RAM模块)
|
OKI electronic componet...
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
