| PART |
Description |
Maker |
| 2N3658 |
MAXIMUM ALLOWABLE RATINGS
|
New Jersey Semi-Conductor Products, Inc.
|
| TSA5888CYRMG |
Low Vcesat PNP Transistor High allowable power dissipation.
|
Taiwan Semiconductor Company, Ltd
|
| P274807 P5274-01 P3257-50 P2748-40 P2748-41 P2748- |
MCT photoconductive detector
|
Hamamatsu Corporation
|
| C3757-02 |
Low noise amplifier for InGaAs, PbS, PbSe and MCT detector
|
Hamamatsu Photonics
|
| C4159 |
Low noise amplifier for InGaAs, PbS, PbSe and MCT detector
|
Hamamatsu Corporation
|
| C3757-02 C5185 |
Low noise amplifier for InGaAs, PbS, PbSe and MCT detector
|
Hamamatsu Corporation
|
| MCTV35P60F1D |
35A / 600V P-Type MOS Controlled Thyristor (MCT) with Anti-Parallel Diode
35A, 600V P-Type MOS Controlled Thyristor (MCT) with Anti-Parallel Diode
|
INTERSIL[Intersil Corporation]
|
| P3257-30 P3257-31 P2750-06 P2750-08 P325707 P3981- |
MCT photoconductive detector Non-cooled type and TE-cooled type suitable for long, continuous operation
|
Hamamatsu Corporation
|
| P5274-50 P2748 P2748-40 P2748-41 P2748-42 P5274 P5 |
MCT photoconductive detector
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
|
