| PART |
Description |
Maker |
| GP1001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| G22001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| A3G18H500-04S A3G18H500-04SR3 |
RF Power GaN Transistor
|
NXP Semiconductors
|
| T2G4003532-FL-15 T2G4003532-FL-EVB1 T2G4003532-FS |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G4005528-FS T1G4005528-FS-EVB1 T1G6001528-Q3 T1G |
55W, 28V, DC ?3.5GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G4003532-FS-15 |
35W, 32V, DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G4003532-FL-15 T1G4003532-FS T1G4003532-FL-EVB1 |
35W, 32V, DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| MAGX-002731-SB2PPR MAGX-002731-100L00 MAGX-002731- |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MAGX-002731-SB1PPR MAGX-002731-030L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-000035-05000P |
GaN Wideband 50 W Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solution...
|
