| PART |
Description |
Maker |
| IRFI830G IRFI830GPBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=3.1A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=3.1A)
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=3.1A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）\u003d 1.5ohm，身份证\u003d 3.1A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRC840 |
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
Hexfet? Power MOSFET
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
| IRCZ24 |
Power MOSFET(Vdss=55V/ Rds(on)=0.040ohm/ Id=26A)
Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier
|
| IRFU320 IRFR320 IRFR320PBF IRFR320TR IRFR320TRL IR |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Power MOSFET(Vdss=400V Rds(on)=1.8ohm Id=3.1A)
Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A)
400V Single N-Channel HEXFET Power MOSFET in a D-Pak package
|
IRF[International Rectifier]
|
| IRFIBC30G IRFIBC30 |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=2.5A)
|
IRF[International Rectifier]
|
| IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直|4A条（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF9610S IRF9610STRL IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
CAP 3.9PF 50V /-0.1PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ 功率MOSFET（减振钢板基本\u003d-00V，的Rds（on）\u003d 3.0ohm，身份证\u003d- 1.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR |
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR |
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
|
IRF[International Rectifier]
|
