| PART |
Description |
Maker |
| AM90CL255-08JC AM90CL255-15JC AM90CL255-12PC |
256K X 1 NIBBLE MODE DRAM, 80 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 150 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 120 ns, PDIP16
|
ADVANCED MICRO DEVICES INC
|
| MT4C4001JC-12IT MT4C4001JC-10883C MT4C4001JC-7883C |
1 meg x 4 DRAM fast page mode DRAM
|
Austin Semiconductor
|
| AK491024GP-12 AK491024GK-12 AK491024GK-80 AK491024 |
x(8 1) Page Mode DRAM Module
× 1）静态列模式DRAM模块
× 1）页面模式内存模
x(8 1) Static Column Mode DRAM Module ×8 1）静态列模式DRAM模块
|
Molex, Inc.
|
| HYB5117400BJ-60 HYB5117400BJ-50 HYB5116400BJ-60 HY |
4M x 4 Bit 2k 5 V 60 ns FPM DRAM
4M x 4 Bit 4k 5 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM
-4M x 4-Bit Dynamic RAM
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MT4C16270 |
DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
|
Micron Technology
|
| AAA2800 AAA2801 |
(AAA2800 Series) Static Column Decode Mode CMOS 256k x 1 DRAM
(AAA2800 Series) Page Mode CMOS 256k x 1 DRAM
|
NMB Technologies
|
| MSC23837A MSC23837A-XXBS18 MSC23837A-XXDS18 |
8388608-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE
8,388,608-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE
SSR AS 480V 25A 0-10V 8388608字36位DRAM模块：快速页面模式型
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| MT9LD272G-7S MT9LDT272G-7 MT9LDT272G-7XS MT9LD272G |
x72 Fast Page Mode DRAM Module
x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Unisonic Technologies Co., Ltd.
|
| MSC2323258A MSC2323258A-XXBS4 MSC2323258A-XXDS4 |
2097152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
DPDT 10A MINI 24VDC 2097152字32位DRAM模块：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
