| PART |
Description |
Maker |
| SUD19N20-90-T4-E3 |
N-Channel 200 V (D-S) 175 °C MOSFET
Trans MOSFET N-CH 200V 19A 3-Pin(2 Tab) DPAK T/R
|
Vishay Siliconix
|
| IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
|
IRF[International Rectifier]
|
| FQPF10N20L |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 6.8A I(D) | TO-220F 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 6.8AI（四）|20F
200V LOGIC N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRFI640G |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=9.8A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.18ohm，身份证\u003d 9.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF9620S IRF9620STRL IRF9620STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V Rds(on)=1.5ohm Id=-3.5A)
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)
Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-3.5A)
|
IRF[International Rectifier]
|
| IRC630 IRC |
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A)
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
| IRFS240B IRFS240BFP001 |
200V N-Channel B-FET / Substitute of IRFS240 & IRFS240A
200V N-Channel MOSFET 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFR9210 IRFU9210 |
-200V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
| IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|1A条（丁）|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）最大值\u003d 0.082ohm，身份证\u003d 31A条）
|
International Rectifier, Corp.
|
| FQT5N20 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 1A条（丁）|的SOT - 223
200V N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFM220B IRFM220BTFFP001 IRFM220BD84Z |
1.13 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFM220A
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FQU5P20 FQD5P20 FQD5P20TM |
200V P-Channel QFET
200V P-Channel MOSFET 3.7 A, 200 V, 1.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
