| PART |
Description |
Maker |
| 2N5064AP T107E141 S0510LS253V S1008LS253V EC103A75 |
0.8 A, 200 V, SCR, TO-92
4 A, 500 V, SCR
10 A, 50 V, SCR, TO-220AB
8 A, 100 V, SCR, TO-220AB
0.8 A, 100 V, SCR, TO-92
6 A, 50 V, SCR, TO-220AB
6 A, 100 V, SCR, TO-220AB
4 A, 300 V, SCR, TO-202AB
8 A, 50 V, SCR, TO-202AB
4 A, 50 V, SCR, TO-202AB
10 A, 100 V, SCR, TO-220AB
|
|
| T107C1 |
4 A, 300 V, SCR, TO-202AB
|
|
| T7SH024.58GDN T72H024.58GDN T707063.258GDN T607021 |
706.5 A, SCR T7S, 3 PIN
706.5 A, SCR T72, 3 PIN
510.25 A, SCR T70, 3 PIN
196.25 A, SCR T60, 3 PIN
431.75 A, SCR T70, 3 PIN
392.5 A, SCR
109.9 A, 300 V, SCR
471 A, SCR
1177.5 A, SCR
785 A, SCR
942 A, SCR
2669 A, SCR
565.2 A, SCR
549.5 A, SCR
2512 A, SCR
1570 A, 700 V, SCR
235.5 A, SCR
62.8 A, SCR
1256 A, SCR
628 A, SCR
4710 A, SCR
1020.5 A, SCR
109.9 A, 150 V, SCR
1570 A, SCR
2826 A, SCR
3140 A, SCR
1727 A, SCR
|
Powerex, Inc.
POWEREX INC
|
| IST110A-6 ISTF160-5F35 ISTF160-3F35 IST85-13 IST85 |
175 A, 600 V, SCR
355 A, 500 V, SCR
355 A, 300 V, SCR
175 A, 1300 V, SCR
175 A, 300 V, SCR
355 A, 200 V, SCR
355 A, 1000 V, SCR
|
|
| IZF1167-7F25 IZF1167-3F25 IZF1167-12F25 IZF1167-10 |
2390 A, 700 V, SCR
2390 A, 300 V, SCR
2390 A, 1200 V, SCR
2390 A, 1000 V, SCR
2390 A, 900 V, SCR
1470 A, 800 V, SCR
1950 A, 1000 V, SCR
1950 A, 1100 V, SCR
1370 A, 1400 V, SCR
1470 A, 500 V, SCR
2835 A, 1100 V, SCR
1370 A, 1200 V, SCR
1470 A, 200 V, SCR
|
ITT, Corp.
|
| MCC162-18IO1 MCC162-14IO1 MCD162-18IO1 MCD162-12IO |
Thyristor and Rectifiers Modules
PC Board Connector; No. of Contacts:8; Pitch Spacing:3.96mm; No. of Rows:1; Mounting Type:PCB Thru-hole; Body Material:PA Polyamide (Nylon); Contact
Thyristor Modules Thyristor/Diode Modules 300 A, 1400 V, SCR
Thyristor Modules Thyristor/Diode Modules 晶闸管模块可控硅/二极管模
Thyristor Modules Thyristor/Diode Modules 300 A, 800 V, SCR
Thyristor Modules Thyristor/Diode Modules 300 A, 1800 V, SCR
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| CR02AM-4 CR02AM CR02AM-6 CR02AM-8 |
0.47 A, 200 V, SCR, TO-92
0.47 A, 300 V, SCR, TO-92
LOW POWER USE PLANAR PASSIVATION TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 07103GOA |
110 A, 300 V, SCR, TO-209AC
|
MICROSEMI CORP-COLORADO
|
| VSKT170-04 VSKT17010 VSKT170-08 VSKT170-12 VSKT170 |
SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A
|
Vishay Siliconix
|
| VSK170PBF |
SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A
|
Vishay Siliconix
|
| R216CH12 R325CH02 R800CH04 |
1125 A, 1200 V, SCR
2398 A, 200 V, SCR
5260 A, 400 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| IRKHF200-02GPS20 IRKHF200-04CPS20 IRKHF200-02CPS20 |
314 A, 200 V, SCR
314 A, 400 V, SCR
282.6 A, 800 V, SCR
314 A, 800 V, SCR
282.6 A, 1200 V, SCR
282.6 A, 200 V, SCR
282.6 A, 600 V, SCR
282.6 A, 1000 V, SCR
|
Cooper Bussmann, Inc.
|
|
