| PART |
Description |
Maker |
| CDL13005 CDL13005A CDL13005B CDL13005C CDL13005E |
75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 40 - 50 hFE.
75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 20 - 31 hFE.
From old datasheet system
NPN PLASTIC POWER TRANSISTOR
75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 10 - 21 hFE.
75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 30 - 41 hFE.
|
Continental Device India Limited
ETC[ETC]
List of Unclassifed Manufacturers
|
| CDL13007 |
80.000W Switching NPN Plastic Leaded Transistor. 400V Vceo, 6.000A Ic, 8 - 40 hFE.
|
Continental Device India Limited
|
| 2SC4242 |
POWER TRANSISTOR(7A,400V,40W)
|
MOSPEC[Mospec Semiconductor]
|
| ASI10730 VHB50-28S |
NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| CD9014C CD9014D CD9014D1 CD9014D3 CD9014E CD9014D2 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 - 600 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 100 - 300 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 150 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 1000 hFE
NPN SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| CN453 CN452 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
0.900W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40 - 150 hFE
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 40 - 200 hFE
|
Continental Device Indi...
CDIL[Continental Device India Limited]
|
| ASI10669 UHBS15-2 ASI10541 ASI10564 ASI10606 ASI10 |
NPN Silicon RF Power Transistor(Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)) UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| BCX70H BCW60FN BCW60FF BCW60B BCW60D BCW60 BCX70G |
?SOT23;VCEO=45V?
NPN Silicon AF Transistors NPN AF硅晶体管
|
Infineon Technologies A...
Siemens Semiconductor Group
INFINEON[Infineon Technologies AG]
|
| 2SC4160 2SC4160M 2SC4160N |
NPN Triple Diffused Planar Silicon Transistor 400V/4A Switching Regulator Applications
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-220
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
Sanyo
|
