| PART |
Description |
Maker |
| 2SD1918 |
High breakdown voltage.(BVCEO = 160V) High transition frequency.(fT = 80MHZ)
|
TY Semiconductor Co., Ltd
|
| 2SC5063 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC5036 2SC5036A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC3982 2SC3982A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC4004 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC3979A 2SC3979 |
SILICON NPN TRIPLE DIFFUSION PLANAR TYPE(FOR HIGH BREAKDOWN VOLTAGE HIGH-SPEED SWITCHING)
|
Panasonic Semiconductor
|
| 2SC5393 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
Panasonic Semiconductor
|
| 2SC3872 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC4096 |
For high breakdown voltage high-speed switching
|
Panasonic
|
| BAW79B BAW78A-BAW79D BAW79D BAW79C BAW79A Q62702-A |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode)
From old datasheet system
|
SIEMENS A G
Siemens Group
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| BFN22 Q62702-F1024 Q62702-F102 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
