| PART |
Description |
Maker |
| HMT451S6MMP8C-G7 HMT451S6MMP8C-S6 HMT451S6MMR8C-G7 |
204pin DDR3 SDRAM SODIMM
512M X 64 DDR DRAM MODULE, DMA204 LEAD FREE, SODIMM-204
|
Hynix Semiconductor, Inc.
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HMT125S6AFP8C-G7 HMT125S6AFP8C-G8 HMT125S6AFP8C-H8 |
204pin DDR3 SDRAM SODIMMs
128M X 64 DDR DRAM MODULE, 20 ns, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
64M X 64 DDR DRAM MODULE, 20 ns, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
DDR DRAM MODULE, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HYMP532S64CLP6-S6 HYMP532S64CLP6-S5 HYMP564S64CLP6 |
32M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| M464S0924DTS M464S0924DTS-C1H M464S0924DTS-C1L M46 |
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 8Mx64 SDRAM内存的SODIMMM × 16位，4BanksK的刷新，3.3V的同步DRAM的社民党
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| M471B1G73BH0 |
204pin Unbuffered SODIMM
|
Samsung
|
| KT6464SSN0UBL-XX KT6464SSN3UBL-XX KT6464SSN |
SDRAM SODIMM MODULE
|
List of Unclassifed Manufacturers
ETC
|
| KMM464S3323BN |
144pin SDRAM SODIMM
|
Samsung Semiconductor
|
| KMM464S924T1 |
PC100 144pin SDRAM SODIMM
|
Samsung Semiconductor
|
| SDN03264C1CJ1SA-60 |
256MB DDR SDRAM SoDIMM
|
List of Unclassifed Manufac...
|
