| PART |
Description |
Maker |
| DIM800DDM12 DIM800DDM12-A000 |
1200V dual switch IGBT module
Dual Switch IGBT Module Preliminary Information
|
Dynex Semiconductor
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| GP401DDS18 |
Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
Low VCE(SAT) Dual Switch IGBT Module Preliminary Information 400 A, 1800 V, N-CHANNEL IGBT
|
DYNEX[Dynex Semiconductor]
Dynex Semiconductor, Ltd.
|
| APTGT50DDA120T3 |
Dual Boost Chopper - IGBT
Dual Boost chopper Trench IGBT Power Module
|
ADPOW[Advanced Power Technology]
|
| APTGF180DU60T |
Dual common source NPT IGBT Power Module
Dual Common Source - IGBT
|
Advanced Power Technology
|
| APTGF150DU120T |
Dual Common Source - IGBT
Dual common source NPT IGBT Power Module
|
Advanced Power Technology
|
| PRFMB300E6 PRFMB300E6C |
IGBT Module-Dual
|
Nihon Inter Electronics Corporation
|
| PRHMB150E6 PRHMB150E6C |
IGBT Module-Dual
|
Nihon Inter Electronics Corporation
|
| PHMB400BS12 |
IGBT Module-Dual
|
Nihon Inter Electronics Corporation
|
| PDMB100BS12 |
IGBT Module-Dual
|
Nihon Inter Electronics Corporation
|
| PRFMB200E6 |
IGBT Module-Dual
|
Nihon Inter Electronics Corporation
|
| DIM400DDS12-A000-15 |
Dual Switch IGBT Module
|
Dynex Semiconductor
|
