| PART |
Description |
Maker |
| HYM71V16655AT6 |
PC100 SDRAM Unbuffered DIMM
|
Hynix Semiconductor
|
| HYM71V16655AT8 |
PC100 SDRAM Unbuffered DIMM
|
Hynix Semiconductor
|
| GMM26416233ENTG |
16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| GMM2649233EFTG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| M366S3323CT0-C1L M366S3323CT0 M366S3323CT0-C1H |
PC100 Unbuffered DIMM
32MB x 64 SDRAM DIMM based on 16MB x 8, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HB52D48GB-A6F HB52D48GB-A6FL HB52D48GB-B6F HB52D48 |
32 MB Unbuffered SDRAM Micro DIMM 4-Mword 隆驴 64-bit, 100 MHz Memory Bus, 1-Bank Module (4 pcs of 4 M 隆驴 16 components) PC100 SDRAM
32 MB Unbuffered SDRAM Micro DIMM 4-Mword × 64-bit, 100 MHz Memory Bus, 1-Bank Module (4 pcs of 4 M × 16 components) PC100 SDRAM
|
Elpida Memory
|
| M366S1623DT0-C80 M366S1623DT0 M366S1623DT0-C1H M36 |
PC100 Unbuffered DIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| M366S6453CTS M366S6453CTS-L1H_C1H M366S6453CTS-L1L |
PC133/PC100 Unbuffered DIMM
|
Samsung semiconductor
|
| HB52D88GB-F HB52D88GB-B6FL HB52D88GB-A6F HB52D88GB |
64 MB Unbuffered SDRAM Micro DIMM(64 MB 未缓冲同步DRAM DIMM)
x64 SDRAM Module X64的内存模
|
Hitachi,Ltd.
Electronic Theatre Controls, Inc.
Omron Electronics LLC Industrial Automation
|
| V436516R04VATG-10PC |
3.3 VOLT 16M x 64 using 8M x 16 PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| HB52R649E1U-B6B HB52R649E1U-A6B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
|
Elpida Memory
|
| V43644R04V V43644R04VCTG-10PC |
3.3 VOLT 4M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
