PART |
Description |
Maker |
MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14 250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
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ZC831 ZC831A ZC831B ZC830 ZC830A ZC830B ZC836B ZC8 |
SOT23 SILICON VARIABLE CAPACITANCE DIODES 25 Volt hyperabrupt varactor diode MS (MIL-C-5015)/97 SERIES 3108A SOLID SHELL ANGLE PLUGS, RIGHT ANGLE BODY STYLE, SOLDER TERMINATION, 22 SHELL SIZE, 22-2 INSERT ARRANGEMENT, PLUG GENDER, 3 CONTACTS 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC DIODES INC
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SLOTTEN-4-17 SLOTTEN-2-17 SLOTTEN-3-17 SLOTTEN-5-1 |
SHIELDED, 288 uH - 432 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 286 uH - 630 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 230 uH - 310 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 72 uH - 163 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 303 uH - 765 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 66 uH - 136 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 67.2 uH - 100.2 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 52.7 uH - 71.3 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 67.2 uH - 100.8 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 280 uH - 432 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 1.76 uH - 2.64 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 2.4 uH - 5.4 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 1.25 uH - 2.75 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 2.9 uH - 3.9 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 18.7 uH - 25.3 uH, VARIABLE INDUCTOR DIP-5
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Coilcraft, Inc.
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HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO 16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
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Renesas Electronics Corporation Samsung Semiconductor Co., Ltd.
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GMD81400 GMF11201 GMF10201 GMF90201 GMF10601 GMF10 |
CAPACITOR, VARIABLE, MICA, 250 V, 380 pF - 1300 pF, HORIZONTAL ADJUSTER, THROUGH HOLE MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 880 pF - 2330 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 15 pF - 130 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 2000 V, 10 pF - 48 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 275 pF - 970 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 550 pF - 1600 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 65 pF - 340 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 450 pF - 1390 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 1300 pF - 2830 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 115 pF - 550 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 1150 pF - 2605 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 45 pF - 280 pF, HORIZONTAL ADJUSTER, THROUGH HOLE MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 350 pF - 1180 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 190 pF - 760 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 780 pF - 2110 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 650 pF - 1890 pF, PANEL MOUNT
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Sprague-Goodman Electronics, Inc.
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MMVL105GT1 ON2289 |
VOLTAGE VARIABLE CAPACITANCE DIODE 2.15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE From old datasheet system
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Leshan Radio Company, Ltd. ONSEMI[ON Semiconductor]
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1N5474 1N5448A 1N5443B 1N5447C 1N5445A 1N5476A JAN |
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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MICROSEMI CORP-LOWELL
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1N5455BCO 1N5468BCO 1N5443BCO 1N5695BCO 1N5444ACO |
82 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 12 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
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BB640 Q62702-B589 |
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners Bd I) Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners / Bd I) From old datasheet system Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I)
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group] Siemens Group
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