| PART |
Description |
Maker |
| ATA5570 ATA557001-DDT ATA557001-DDW |
Multifunctional 330-bit Read/Write RF Sensor Identification IC
|
ATMEL Corporation
聚兴科技股份有限公司
|
| AD7782BRU AD7782 |
High Resolution Analog-to-Digital Converters Feature a Simple Interface
Read Only/ Pin Configured 24-Bit ADC
Read Only, Pin Configured 24-Bit ADC
|
AD[Analog Devices]
|
| HEF4505B HEF4505BF HEF4505BD HEF4505BN HEF4505BP H |
64-bit, 1-bit per word random access read/write memory
From old datasheet system
64-bit/ 1-bit per word random access read/write memory
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位）.5伏的CMOS只突发模式，双启动，同步写闪
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| VCM4B10/00 |
KAMERA MINI PCB FARBE 330 ZEILEN 3.8MM 卡美拉迷你板FARBE 330 ZEILEN 3.8毫米
|
ECM Electronics, Ltd.
|
| IM5603 IM5623 |
ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY 1024位电可编程只读存储器双极
(IM5603 / IM5623) ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY
|
Intersil, Corp.
Intersil Corporation
|
| AM41DL3248GT45IS M41000002S M41000002L |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同步写闪存和8兆位 M中的x 8-Bit/512亩x 16位），静态存储器
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2x 16位）.0伏的CMOS只，同步写闪存和8兆位 M中的x 8-Bit/512x 16位），静态存储器
|
Samsung Semiconductor Co., Ltd.
Advanced Micro Devices, Inc.
|
| S29JL064H S29JL064H70TAI000 S29JL064H70TAI002 S29J |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
|
SPANSION[SPANSION]
|
| UPD42S18165L UPD42S18165LLE-A70 UPD42S18165LG5-A50 |
3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
|
NEC
|
| AM29PDL128G80 AM29PDL128G90 AM29PDL128G70R |
128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
|
Advanced Micro Devices
|
| TLE636303 |
Multifunctional Voltage Regulator and Watchdog
|
Infineon Technologies AG
Infineon Technologies A...
|
| TLE6711G TLE6711 |
MULTIFUNCTIONAL VOLTAGE REGULATOR AND WATCHDOG
|
Infineon Technologies AG
|
