| PART |
Description |
Maker |
| NX6342EP |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
1 310nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX8341_06 NX8341 NX8341TB-AZ NX8341TJ-AZ NX8341TL- |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
CEL[California Eastern Labs]
|
| NX5320EH-AZ |
1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION
|
California Eastern Labs
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NDL7603PC NDL7603P NDL7603P1C NDL7603P1D NDL7603P2 |
1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE 1 310纳米光纤通信InGaAsP多量子阱激光器激光二极管同轴模块
Opical Fiber Communications Laser Diode(光纤通信激光二极管)
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NX5322EH-AZ NX5322EK-AZ |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX5321EH NX5321EK NX5321 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
NEC
|
| NX7339BB-AA |
1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
http://
|
| NX8313UD-AZ NX8313UD |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
|
CEL[California Eastern Labs]
|
| NX6314EH |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
California Eastern Labs
|
