PART |
Description |
Maker |
KMM53632004BK |
32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
|
Samsung Semiconductor
|
KMM5364005CK |
(KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
|
Samsung Semiconductor
|
TS8MED3260G |
From old datasheet system 32MB 72-PIN EDO SIMM With 16Mx8 3.3VOLT 32MB2针EDO公司上海药物研究所6Mx8 3.3VOLT
|
List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
|
AEPDH4M9L-10S-NP AEPDS4M9L-10S-NP AEPDH4M9L-12N-NP |
4M X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30 SIMM-30 4M X 9 MULTI DEVICE DRAM MODULE, 120 ns, SMA30 SIMM-30
|
Linear Technology, Corp.
|
HY57V161610FTP-XX HY57V161610FT-XX HY57V161610FT-5 |
16M SDRAM 16Mb Synchronous DRAM
|
Hynix Semiconductor
|
KMM5362000B KMM5362000BG |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
KMM5328004BSWG KMM5328004BSW |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5364005BSW |
4M x 36 DRAM SIMM(4M x 36 动RAM模块) 4米36的DRAM上海药物研究所米36动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|