| PART |
Description |
Maker |
| IXGH50N60B2 IXGT50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
HiPerFASTTM IGBT B2-Class High Speed IGBTs
|
IXYS Corporation
|
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXGH10N100A IXGH10N100 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
| IXGM17N100A IXGH17N100 IXGH17N100A IXGM17N100 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
| IXSM40N60 IXSM40N60A IXSH40N60A IXSH40N60 |
Low VCE(sat) IGBT, High Speed IGBT
|
IXYS[IXYS Corporation]
|
| GA200NS61U |
600V UltraFast 10-30 kHz Hs Chop S IGBT in a INT-A-Pak package
High Side Switch Chopper Module Ultra-Fast Speed IGBT
|
IRF[International Rectifier]
|
| IXGH10N60AU1 IXGH10N60U1 |
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
|
IXYS Corporation
|
| IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
| RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F6DPK RJH60F6DPK-00-T0 |
85 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| Q67078-A4400-A2 BUP200 BUP200SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
