| PART |
Description |
Maker |
| AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML811P5011 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT2022 NPT2022-15 |
Gallium Nitride 48V, 100W, DC-2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPT2010 |
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| D2022UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W - 28V - 500MHz PUSH-PULL
|
SAMES[Sames]
|
| WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| M68769SH |
RF POWER MODULE 470-512 MHz, 12.5V, 45W FM MOBILE RADIO
470-512MHz, 12.5V, 45W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M57788M 57788M |
430-450MHz, 12.5V, 45W, FM MOBILE RADIO 43050MHz2.5V5瓦，调频移动通信
430-450MHz / 12.5V / 45W / FM MOBILE RADIO
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
HiPerFRED Epitaxial Diode with soft recovery
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| RFP-375375N6Z50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
|
