| PART |
Description |
Maker |
| 1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V.
Microsemi Corporation
|
| 301URA120P3 301URA120P2 303URA120P3 301UA120 301UA |
330 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AB
330 A, 1600 V, SILICON, RECTIFIER DIODE, DO-205AB
|
VISHAY SEMICONDUCTORS
|
| 301U160 301URA240 301URA180 301URA120 301URA250P3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
1600V 330A Std. Recovery Diode in a DO-205AB (DO-9)package 1600V 330A性病。恢复二极管中的DO - 205AB（请 9）封
AVALANCE DIODE 330A ANODE STUD 雪崩二极30A阳极螺柱
300 A, 2500 V, SILICON, RECTIFIER DIODE, DO-205AB
DIODE 330 A, 1600 V, SILICON, RECTIFIER DIODE, DO-205AB, Rectifier Diode
DIODE 330 A, 2000 V, SILICON, RECTIFIER DIODE, DO-205AB, Rectifier Diode
|
Bourns, Inc.
International Rectifier, Corp.
Vishay Semiconductors
|
| NX1029X |
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
|
NXP Semiconductors
|
| 34536 |
LM259X Inductor 330 μHy .30 ADC
|
SCHOTT CORPORATION
|
| RS4F332D |
1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR
|
CRYDOM CORP
|
| SQM18N33-160H SQM18N33-160H-GE3 |
N-Channel 330 V (D-S) 175 Celsius MOSFET
|
Vishay Siliconix
|
| OLS-330MW-X-TD OLS-330MW-X-TU OLS-330UW-X-TU OLS-3 |
Series 330 - 1206 with Lens white
|
OSA Opto Light GmbH
|
| OLS-330D-X-TD OLS-330D-X-TU OLS-330G-X-TD OLS-330G |
Series 330 - 1206 with Lens low cost
|
OSA Opto Light GmbH
|
| FNDDR1133 |
3.3V CMOS Low-Jitter 133.330 MHz DDR XO
|
Pericom Semiconductor Corporation
|
| 1302261603 |
Pivot Base 330 Degree - 943/953/954
|
Molex Electronics Ltd.
|
| OLS-330HD-X-TD OLS-330HD-X-TU OLS-330HR-X-TD OLS-3 |
Series 330 - 1206 with Lens High luminous intensity
|
OSA Opto Light GmbH
|
