PART |
Description |
Maker |
BGA614 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 12dBm, SOT343 Silicon Germanium Broadband MMIC Amplifier
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INFINEON[Infineon Technologies AG]
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
UPC3232TB-E3-A UPC3232TB UPC3232TB-E3 |
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
1N128 |
Germanium Diodes / Germanium Rectifiers
|
ETC
|
BFR720L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
BFP690E6327 |
NPN Silicon Germanium RF Transistor
|
Infineon
|
BFP620 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
SGA-9289 |
Silicon Germanium HBT Amplifier
|
Stanford Microdevices
|
BFP740F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell California Eastern Labs
|
Q60103-X152-D Q60103-X152-E Q60103-X152-F Q60103-X |
pnp germanium transistors pnp型锗晶体 CAP .0022UF 1600V METAL POLYPRO pnp型锗晶体 Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:37; Connector Shell Size:14; Connecting 24 V, PNP germanium transistor 20 V, PNP germanium transistor
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Siemens Semiconductor G... SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BGA61208 |
Silicon Germanium Broadband MMIC Amplifier 0 MHz - 2800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Infineon Technologies AG
|