PART |
Description |
Maker |
MMBT2907A MMBT2907 |
Surface Mount Si-Epi-Planar Switching Transistors
|
Diotec Semiconductor
|
BCW61A BCW61C BCW61B BCW61D |
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
BCW30 BCW2907 BCW29 |
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
BC858 BC857 BC860 BC856 BC859 |
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
7206FRPFS-50 7206F 7206FRPFB-15 7206FRPFB-20 7206F |
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
|
MAXWELL[Maxwell Technologies]
|
BC846 |
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
BCV26-15 |
Surface Mount Darlington Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
2SD946 2SD946A 2SD946AQ 2SD946AR 2SD950 2SD951 2SD |
Si NPN triple diffused junction mesa . Line-operated horizontal deflection output. SI NPN EPITAXIAL PLANAR DARLINGTON 1 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126
|
PANASONIC[Panasonic Semiconductor] Panasonic, Corp.
|
2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier. Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
2N2369AU 2N2369AUA 2N2369AUB 2N4449 2N4449UA 2N444 |
NPN SILICON SWITCHING TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AB NPN BIPOLAR TRANSISTOR NPN Transistor
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82 晶体管|晶体管|叩| 100V的五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 180V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁| 6A条一c)|2 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五(巴西)总裁|甲一(c)| STR-5/16
|
Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
|