| PART |
Description |
Maker |
| PC4SF21YVZ |
VDRM : 800V, Reinforced insulation type Zero cross type DIP 6pin Phototriac Coupler for triggering
|
Sharp Electrionic Components
|
| PC4SF11YVZ |
VDRM : 800V, Reinforced insulation type Non-zero cross type DIP 6pin Phototriac Coupler for triggering
|
Sharp Electrionic Components
|
| LS31801111 LS3180-GK LS3180-H LS3180-J LS3180-JM L |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:25mA; Current, It av:8A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Current, It av:8A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Current, It av:8A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes T1毫米）广角发光二极管
T1 (3mm) WIDE ANGLE LED LAMP T1毫米）广角发光二极管
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BT138F-600 BT138F |
600V Vdrm 12A Triac, 1.65V Peak On-State Voltage, 2.0mA Repetitive Peak Off-State Current
Bi-Directional Triode Thyristor
|
SEMIWELL[SemiWell Semiconductor]
|
| BT151-600 BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
| Z86C95-20AEC |
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes 8位微控制
|
Microchip Technology, Inc.
|
| MG360V1US41 E002277 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| DE1E3KX152MB5 |
Safety Standard Certified Type KX (Reinforced Insulation)
|
Murata Manufacturing Co., Ltd.
|
| XF0013-81 XF6006-11 XF0013-31 XF0013-21 XF0013-61 |
T1/CEPT/ISDN-PRI TRANSFORMERS Reinforced Insulation, 3 KVrms
|
XFMRS Inc.
|
| PM-T1030 PM-T1031 PM-T1032 PM-T1033 PM-T1034 PM-T1 |
T1/CEPT/ISDN-PRI 3KV - REINFORCED SMD TRANSFORMERS
|
Premier Magnetics, Inc.
|
| PM-IS30 PM-IS31 PM-IS32 PM-IS33 PM-IS34 PM-IS35 PM |
T1/CEPT/ISDN-PRI 3KV - REINFORCED THRU-HOLE TRANSFORMERS
|
Premier Magnetics, Inc.
|
