| PART |
Description |
Maker |
| KM641003A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM641001B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LY61L25616GL-10LL LY61L25616GL-12LLET LY61L25616GL |
256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LY61L2568AML-10 LY61L2568AML-10I LY61L2568AML-10IT |
256K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| MB81C81A MB81C81A-25 MB81C81A-35 |
CMOS 256K-BIT HIGH-SPEED SRAM
|
Fujitsu Component Limited.
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Limited
|
| KM641003CJ-10 |
256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM
|
Samsung Electronics
|
| V53C8256H35 |
ULTRA-HIGH SPEED, 256K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高速，256K × 8快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| HY62LF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62LF16406D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16406E |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16404C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| AT27LV020A AT27LV020A-12 AT27LV020A-12JC AT27LV020 |
High Speed CMOS Differential 4-Channel Analog Multiplexer/Demultiplexer 16-SOIC -55 to 125 256K X 8 OTPROM, 150 ns, PDSO32
High Speed CMOS Differential 4-Channel Analog Multiplexer/Demultiplexer 16-SO -55 to 125 256K X 8 OTPROM, 150 ns, PDSO32
2 Megabit 256K x 8 Low Voltage OTP EPROM 256K X 8 OTPROM, 120 ns, PQCC32
High Speed CMOS Differential 4-Channel Analog Multiplexer/Demultiplexer 16-TSSOP -55 to 125 256K X 8 OTPROM, 90 ns, PDSO32
2 Megabit 256K x 8 Low Voltage OTP EPROM 256K X 8 OTPROM, 90 ns, PQCC32
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
