| PART |
Description |
Maker |
| 1N4007G 1N914 1N4001G 1N4004G 1N4006G |
250 mW EPITAXIAL PLANAR DIODES
1.0 Amp GLASS PASSIVATED MINIATURE PLASTIC SILICON RECTIFIERS
|
First Components International
|
| 60S05-13 |
6 Amp Axial-Lead Glass Passivated Rectifier 50 - 1000 Volts Glass Passivated Chip
|
Micro Commercial Compon...
|
| 1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V，最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电3V，最大反向电流降.01μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电12V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电14V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V，最大反向电.8μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V，最大反向电0μA的硅外延平面型齐纳二极管)
PC 5/10-G-7,62
PCV 5/ 4-G-7,62
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V，最大反向电0μA的硅外延平面型齐纳二极管)
From old datasheet system
Silicon Epitaxial Planar Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| AB80-C1500RG AB380-C1500RG AB250-C1500RG AB40-C150 |
200 V, 1.5 A Avalanche glass passivated bridge rectifier
900 V, 1.5 A Avalanche glass passivated bridge rectifier
600 V, 1.5 A Avalanche glass passivated bridge rectifier
100 V, 1.5 A Avalanche glass passivated bridge rectifier
|
EIC discrete Semiconductors
|
| GBPC2501 GBPC25005 GBPC2510 GBPC2508 GBPC2502 GBPC |
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 25 Amperes)
SINGLE PHASE SILICON PASSIVATED BRIDGE RECTIFIER
Isolated Flyback Switching Regulator with 9V Output 隔离反激式开关稳V输出
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
|
Shanghai Sunrise Electronics
Pan Jit International Inc.
CHENYI[Shanghai Lunsure Electronic Tech]
Shanghai LUNSURE Electronic Technology Co., Ltd.
General Semiconductor
|
| 15KW160 15KW160A 15KW260 15KW260A 15KW240 15KW240A |
160.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
220.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
110.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
200.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
170.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| NS P018PP1CS1 P018PP1CS2 P018PP1CS3 P020HB1CS1 P02 |
Series Planar Transformers for High-Current Telecom Applications
Third generation of planar transformers
|
PREMO CORPORATION S.L
|
| 1N4148WT 1N4727A-1N4761A |
Silicon Epitaxial Planar Switching Diode
Silicon Planar Power Zener Diodes
|
Kingtronics International Company
Kingtronics Internation...
|
| GS1A GS1B GS1D GS1G GS1J GS1K GS1M |
Standard Recovery Pack: SMA
SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞50 TO 1000V CURRENT拢潞 1.0A
SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE?0 TO 1000V CURRENT 1.0A
SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE?0 TO 1000V CURRENT?/a> 1.0A
|
Gulf Semiconductor
http://
|
| KTX311T |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
|
KEC[KEC(Korea Electronics)]
|
