PART |
Description |
Maker |
PPF450M |
N Channel MOSFET; Package: TO-254; ID (A): 8; RDS(on) (Ohms): 0.42; PD (W): 150; BVDSS (V): 500; Rq: 0.83; 12 A, 500 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
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IRFF430 FN1894 |
2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET 2.75 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 2.75A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET From old datasheet system
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Intersil, Corp. Intersil Corporation
|
MTE53N50E MTE53N50E_D ON2535 ON2534 |
From old datasheet system TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM 53 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MOTOROLA[Motorola, Inc] ON Semi Motorola Mobility Holdings, Inc.
|
2SK1981-01 |
N-channel MOS-FET 10 A, 500 V, 0.76 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
APT20F50B APT20F50S |
N-Channel FREDFET 20 A, 500 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation MICROSEMI POWER PRODUCTS GROUP
|
2SK2874-01L 2SK2874-01S 2SK2874 |
N-channel MOS-FET 6 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
IXTN36N50 |
N-Channel Enhancement Mode 36 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp. IXYS Corporation
|
VN0550N3-G |
N-Channel Enhancement-Mode Vertical DMOS FETs 50 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Supertex, Inc.
|
2SK1937-01 |
SWITCHING DIODE, 85V, SM SOT23 15 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET N-channel MOS-FET
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
FQNL2N50BBU |
500V N-Channel QFET; Package: TO-92L; No of Pins: 3; Container: Bulk 0.35 A, 500 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
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