| PART |
Description |
Maker |
| SBW13009 |
130W Bipolar Junction Transistor, 12A Ic, 400V Vceo, 700V Vces
High Voltage Fast-Switching NPN Power Transistor
|
SEMIWELL[SemiWell Semiconductor]
|
| 2SC3295 |
High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High voltage: VCEO = 50 V.
|
TY Semiconductor Co., L...
|
| 2SA18621 2SA2072 2SA1862 |
High-voltage Switching Transistor (?400V, ?2A)
High-voltage Switching Transistor (−400V, −2A)
High voltage discharge, High speed switching, Low Noise (?60V, ?3A)
|
ROHM[Rohm]
|
| 2SC2712 |
High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 70 700
|
TY Semiconductor Co., Ltd
|
| 2SC4102 |
High breakdown voltage.(VCEO = 120V)
|
TY Semiconductor Co., Ltd
|
| 2SC5211 |
High voltage VCEO=50V. Small package for mounting.Collector-base voltage VCBO 55 V
|
TY Semiconductor Co., Ltd
|
| BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE.
|
Continental Device India Limited
|
| APT40M75JN APT40M90JN |
POWER MOS IV 400V 56.0A 0.075 Ohm / 400V 51.0A 0.090 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装（Vcbo00V，Vceo00V，Vebo6V的）（不适用沟道增强型，高电压功率马鞍山场效应管（Vcbo00V，Vceo00V，Vebo6V的）
|
SemeLAB
SEME-LAB[Seme LAB]
Motorola Mobility Holdings, Inc.
|
| APT4020BN APT4020 APT4025BN |
POWER MOS V 400V 26.0A 0.20 Ohm / 400V 23.0A 0.25 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
apt
ADPOW[Advanced Power Technology]
|
