PART |
Description |
Maker |
MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT 100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR 200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR 150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT
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HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB 43A/ 1200V/ NPT Series N-Channel IGBT 43A 1200V NPT Series N-Channel IGBT
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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MGY25N120_D ON1934 MGY25N120 |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264 IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED From old datasheet system
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ONSEMI[ON Semiconductor]
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HGTP1N120BN HGTD1N120BNS HGTD1N120BNS9A |
5.3A, 1200V, NPT Series N-Channel IGBT 5.3A, 1200V, NPT Series N-Channel IGBT 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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GP1600FSS12 |
Powerline N-Channel Single Switch IGBT Module Advance Information 2100 A, 1200 V, N-CHANNEL IGBT
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Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
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APT35GN120L2DQ2 APT35GN120L2DQ2G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX™ [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT
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Microsemi, Corp. Advanced Power Technology
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APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
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Microsemi, Corp.
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IXGN50N120C3H1 |
High-Speed PT IGBT for 20-50 kHz Switching 95 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
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IRG4PSH71K |
78 A, 1200 V, N-CHANNEL IGBT 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-274AA package
|
International Rectifier
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APTGF100A120TG |
Phase leg NPT IGBT Power Module 135 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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APT15GN120BDQ1 APT15GN120BDQ1G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: TO-247 [B]; BV(CES) (V): 1200; IC (A): 22; 45 A, 1200 V, N-CHANNEL IGBT, TO-247AD ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
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Microsemi, Corp. Advanced Power Technology
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