| PART |
Description |
Maker |
| IRFAG40 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
|
International Rectifier
|
| MMIX1F160N30T |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXFH26N60P IXFV26N60PS IXFQ26N60P IXFT26N60P IXFV2 |
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
|
IXYS[IXYS Corporation]
|
| MMIX1F360N15T2 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| MMIX1F40N110P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
|
IXYS Corporation
|
| IXTP05N100P IXTA05N100P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTP14N60PM |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTQ3N150M |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IRFF210 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
Intersil Corporation
|
| IXTN600N04T2 |
TrenchT2 GigaMOS Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXFX48N60P IXFK48N60P |
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXFV26N60P IXFV26N60PS |
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated 26 A, 600 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
