| PART |
Description |
Maker |
| 2SA1413-Z |
High Voltage: VCEO=-600V High speed:tr 1.0ìs Collector to Base Voltage VCBO -600 V
|
TY Semiconductor Co., Ltd
|
| 2SA1038S 2SA1579 2SA1514K |
ER 3C 3#12 PIN PLUG
High-voltage Amplifier Transistor (−120V/ −50mA)
High-voltage Amplifier Transistor (-120V, -50mA)
High-voltage Amplifier Transistor (−120V −50mA)
High-voltage Amplifier Transistor (−120V, −50mA)
|
Rohm Co., Ltd.
ROHM[Rohm]
|
| CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
| 2SC5161 |
High breakdown voltage.VCEO = 400V NPN silicon transistor
|
TY Semiconductor Co., Ltd
|
| 2SA1415 |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semiconductor Co., Ltd
|
| CSD363 CSD363O CSD363R CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
| UDT1605G-AB3-R UDT1605L-AB3-R |
120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
|
Unisonic Technologies
|
| FCX705TA FCX705 |
120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
|
ZETEX[Zetex Semiconductors]
|
| 2SC4849 |
HIGH-VOLTAGE SWITCHING TRANSISTOR (POWER SUPPLY) ( 120V/ 7A)
|
ROHM
|
| BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE.
|
Continental Device India Limited
|
| CP756 |
0.750W High Voltage PNP Plastic Leaded Transistor. 200V Vceo, 0.500A Ic, 40 hFE.
|
Continental Device India Limited
|
