| PART |
Description |
Maker |
| CY7C1561KV18 CY7C1561KV18-400BZC CY7C1561KV18-400B |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.29 ns, PBGA165
72-Mbit QDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
| CY7C1645KV18 CY7C1643KV18-450BZI CY7C1643KV18-400B |
144-Mbit QDR? II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
| R1QAA4418RBG-20IA0 R1QAA4436RBG-20IA0 R1QAA4418RBG |
144-Mbit QDR?II SRAM 4-word Burst Architecture (2.5 Cycle Read latency)
|
Renesas Electronics Corporation
|
| CY7C1513JV18-250BZXC |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1292DV18-200BZXC CY7C1292DV18-167BZXC CY7C1294 |
9-Mbit QDR- IISRAM 2-Word Burst Architecture 512K X 18 QDR SRAM, 0.45 ns, PBGA165
9-Mbit QDR- IISRAM 2-Word Burst Architecture 512K X 18 QDR SRAM, 0.5 ns, PBGA165
9-Mbit QDR- IISRAM 2-Word Burst Architecture 256K X 36 QDR SRAM, 0.5 ns, PBGA165
9-Mbit QDR- IISRAM 2-Word Burst Architecture 256K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1510AV18-200BZC CY7C1510AV18-200BZI CY7C1510AV |
72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 36 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR-IISRAM 2-Word Burst Architecture 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1412V18-200BZCES CY7C1414V18-200BZCES CY7C1410 |
36-Mbit QDR-II SRAM 2-Word Burst Architecture
36-Mbit QDR-II™ SRAM 2-Word Burst Architecture
36-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构（2.5周期读写延迟
18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| R1Q2A3609 R1Q2A3636 R1Q2A3618 R1Q2A3609ABG-60R R1Q |
36-Mbit QDR™II SRAM 2-word Burst
36-Mbit QDR™II SRAM 2-word Burst
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| CY7C1304CV25-100BZC CY7C1304CV25-167BZC CY7C1304CV |
9-Mbit Burst of 4 Pipelined SRAM with QDR(TM)Architecture
9-Mbit Burst of 4 Pipelined SRAM with QDR垄芒 Architecture
9-Mbit Burst of 4 Pipelined SRAM with QDR Architecture
9-Mbit Burst of 4 Pipelined SRAM with QDR?/a> Architecture
|
Cypress Semiconductor
|
