| PART |
Description |
Maker |
| MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| RFH10N50 RFH10N45 |
CAP 1000PF 200V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs 10 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MUX08 MUX08BRC_883 MUX08S MUX-08 MUX-08AQ MUX-08BQ |
JFET SWITCH RATHER THAN CMOS
8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16
8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
ID ISC.LRMU1000-A-FCC UHF READER
Tools, Tips Soldering; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected)
8-Channel Analog Multiplexer
4-Channel Analog Multiplexer
8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected)
|
ANALOG DEVICES INC
Analog Devices, Inc.
AD[Analog Devices]
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| STF9NM60N STP9NM60N |
N-channel 600 V, 0.63 Ohm, 6.5 A TO-220FP MDmesh(TM) II Power MOSFET
N-channel 600 V, 0.63 Ohm, 6.5 A TO-220 MDmesh(TM) II Power MOSFET
|
ST Microelectronics
|
| S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| STU6N60M2 STF6N60M2 STP6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
ST Microelectronics
|
| FDFME3N311ZT |
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 30 V, 1.6 A, 299 mΩ
Integrated N-Channel PowerTrench垄莽 MOSFET and Schottky Diode 30 V, 1.6 A, 299 m楼?
|
Fairchild Semiconductor
|
| 2SK3567 |
3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MICROSEMI POWER PRODUCTS GROUP
|
|
