| PART |
Description |
Maker |
| HM628512BI HM628512BLFPI-7 HM628512BLFPI-8 HM62851 |
4 M SRAM (512-kword x 8-bit)
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
Octal Buffers And Line Drivers With 3-State Outputs 20-CDIP -55 to 125
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R<sub>1</sub> (typ): 47.0 kOhm; R<sub>2</sub>: 47.0 k?; h<sub>FE</sub> (min): 70.0; V<sub>i (on)</sub> (min): 1.0 2mA / 0.3V;
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http://
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
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| MSMC-0102 MSMC-0104 MSMC-0103 MSMC-0105 MSMC-0100 |
PHOTOCELL,90mW,150V PEAK, 27KohmMAX LIGHT,2MohmMIN DARK
PHOTOCELL,150mW,200VPK,3.6Kohm MAX LITE,0.3Mohm MIN DARK
PHOTOCELL,90mW,150VPK,5Kohm, MAX LITE,20Mohm MIN DARK
PHOTOCELL,400mW,350VPK,8Kohm MAX LITE,1Mohm MIN. DARK
PHOTOCELL,100mW,150VPK,3Kohm, MAX LITE, 0.2Mohm MIN DARK
PHOTOCELL,100mW,150VPK,80Kohm, MAX LITE,5Mohm MIN DARK
CAP,CERM,DISC,470PF,1KV,20%
CAP,CERM,DISC,0.047UF,1KV,20%
AP,CERM,DISC,5PF,50V,20% INCREMENTS of 10
PHOTOCELL,90mW,150VPK,27Kohm, MAX LITE,0.3Mohm MIN DARK 医药0W的超小型开关电
PHOTOCELL,90mW,150VPK,10Kohm, MAX LITE,20Mohm MIN DARK 医药0W的超小型开关电
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Astrodyne, Inc.
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| PDIP-40 |
A : MIN 3.300 MAX 4.200 B : MIN 0.018 MAX 0.570
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Analog Microelectronics
|
| TO-263-5 |
A : MIN 9.800 MAX 10.668 B : MIN 8.200 MAX 9.169
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Analog Microelectronics
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| MAX6314US25D1-T MAX6314US25D2-T MAX6314US25D3-T MA |
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 4.39V. Reset timeout period(min) 1120ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 4.39V. Reset timeout period(min) 1ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 2.93V. Reset timeout period(min) 1120ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 2.63V. Reset timeout period(min) 1ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 2.63V. Reset timeout period(min) 1120ms.
68HC11/Bidirectional-Compatible 渭P Reset Circuit
68HC11/Bidirectional-Compatible P Reset Circuit
DIODE SWITCHING DUAL SERIES 75V 215mA-Io 150mW 3000ns-trr SOT-523 3K/REEL
68HC11/Bidirectional-Compatible レP Reset Circuit 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 2.63V. Reset timeout period(min) 20ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 3.08V. Reset timeout period(min) 140ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 3.50V. Reset timeout period(min) 140ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 4.39V. Reset timeout period(min) 140ms.
68HC11/Bidirectional-Compatible μP Reset Circuit
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MAXIM - Dallas Semiconductor
http://
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
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| 15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特175000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特75000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压220伏特75000脉冲峰值功率）
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
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Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
|
| BCX56 BCX56135 |
80 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
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NXP SEMICONDUCTORS
Philips
|
| 2PA1774Q115 |
PNP general-purpose transistor - Complement: 2PC4617Q ; fT min: 100 MHz; hFE max: 270 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 150 mW; VCEO max: 40 V; Package: SOT416 (SC-75); Container: Tape reel smd
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NXP SEMICONDUCTORS
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| TO-263-3 |
(D2 PAK) A : MIN 9.65 MAX 10.67 B : MIN 8.28 MAX 9.66
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Analog Microelectronics
|
| M28W320EBB85ZB1T M28W320EBT85N1T M28W320EBB85N1T M |
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 12.7 V; VZ min.: 11.4 V; VZ nom: 12 V
surface mount silicon Zener diodes
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 15.6 V; VZ min.: 13.8 V; VZ nom: 15 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 11.6 V; VZ min.: 10.4 V; VZ nom: 11 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 10.6 V; VZ min.: 9.4 V; VZ nom: 10 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.5 V; VZ min.: 3.1 V; VZ nom: 3.3 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 14.1 V; VZ min.: 12.4 V; VZ nom: 13 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.6 V; VZ min.: 2.2 V; VZ nom: 2.4 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.9 V; VZ min.: 2.5 V; VZ nom: 2.7 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.2 V; VZ min.: 2.8 V; VZ nom: 3 V
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位（处理器x16插槽，引导块V电源快闪记忆
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意法半导
STMicroelectronics N.V.
|
| FS30UM-3 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Bench Power Supply; Output Voltage:35V; Output Current:6A; Number of Outputs:1; Calibrated:No; Display Technology:Digital; Output Current Max:6A; Output Current Min:0A; Output Voltage Max:35V; Output Voltage Min:0V
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| CMA4825P-10 CMA4850 |
TRIGGER OUTPUT SOLID STATE RELAY, 4000 V ISOLATION-MAX
Solid-State DIN Rail Mount Relay; Output Device:SCR; Output Voltage Max:530Vrms; Output Voltage Min:48Vrms; Control Voltage Max:10VAC; Control Voltage Min:140VAC; Load Current Max:50A; Switching:Zero Cross RoHS Compliant: Yes
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CRYDOM CORP
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