PART |
Description |
Maker |
2SD882 2SD882G-X-T60-K 2SD882G-X-T6C-K 2SD882G-X-T |
MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-251
|
UNISONIC TECHNOLOGIES CO LTD
|
MMJT9435T1G MMJT9435T3G |
Bipolar Power Transistors PNP Silicon 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA
|
ON Semiconductor
|
SP300S SP250S |
15,000 V - 30,000 V Rectifier Stacks 0.5 A Forward Current 3000 ns Recovery Time SILICON, SIGNAL DIODE
|
Voltage Multipliers, Inc.
|
SMLJ6.5 SMLJ7.5A SMLJ6.0A SMLJ6.5A SMLJ8.0 SMLJ8.5 |
Transient Voltage Suppressor 5.0 to 170 Volts 3000 Watt 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB Transient Voltage Suppressor 5.0 to 170 Volts 3000 Watt 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB 740740201 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
|
Micro Commercial Components Corp. Micro Commercial Components, Corp. Micro Commercial Compon...
|
3KP7.0C 3KP7.0C-T3 3KP8.0A-T3 |
3000 W, BIDIRECTIONAL, SILICON, TVS DIODE PLASTIC, P-600, 2 PIN 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
Sensitron Semiconductor
|
SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER 0.5 A, 10000 V, SILICON, SIGNAL DIODE 0.5 A, 12500 V, SILICON, SIGNAL DIODE 0.5 A, 22000 V, SILICON, SIGNAL DIODE 0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc SOLID STATE DEVICES INC
|
BAS16HT110 BAS16HT1G |
Switching Diode SOD323 75V; Package: SOD-323 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 3000 0.2 A, 75 V, SILICON, SIGNAL DIODE
|
ON Semiconductor
|
BA982 LL4148 LS4154 BAV21 LS4150 |
SILICON, VHF BAND, MIXER DIODE 0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA 0.15 A, 35 V, SILICON, SIGNAL DIODE 0.25 A, 250 V, SILICON, SIGNAL DIODE, DO-35 0.3 A, 50 V, SILICON, SIGNAL DIODE
|
TEMIC SEMICONDUCTORS
|
2N2851 |
3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
SOLITRON DEVICES INC
|
BDS935 |
3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP SEMICONDUCTORS
|
1N914BT-10 1N914BT-87Y 1N914BT-12A 1N914BT-85 1N91 |
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35 0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35 0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-35 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-34 0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-35 0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-34 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35 0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34 0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-34
|
|
3.0SMCJ17CA-T3 3.0SMCJ8.0C-T3 3.0SMCJ33C-T3 3.0SMC |
3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
|
SENSITRON SEMICONDUCTOR
|
|