PART |
Description |
Maker |
2SC4003 |
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
|
TY Semiconductor Co., Ltd
|
2SC4694 |
Adoption of MBIT process. High DC current gain. High VEBO (VEBO 25V).
|
TY Semiconductor Co., Ltd
|
2SC3649 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
2SA1593S-TL-E 2SA1593T-E 2SA1593T-TL-E 2SA1593S-E |
Bipolar Transistor Adoption of FBET, MBIT processes
|
ON Semiconductor
|
2SB1122 |
Adoption of FBET process Very small size making it easy to provide highdensity hybrid ICS
|
TY Semiconductor Co., L...
|
2SC5310 |
NPN Epitaxial Planar Silicon Transistors Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SA1705 |
Bipolar Transistor Adoption of FBET process
|
ON Semiconductor
|
M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
AT52BR6408A AT52BR6408AT-85CI AT52BR6408A-70CI AT5 |
From old datasheet system 64-Mbit Flash, 8-Mbit SRAM (x16 I/O) 64 Mbit Multi-plane Flash combined with 8-Mbit SRAM
|
Atmel Corp. ATMEL[ATMEL Corporation]
|
DD28F032SA DD28F032SA-070 DD28F032SA-080 |
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
|
Intel Corporation
|
VS28F016SV MS28F016SV |
16-Mbit (1-Mbit x 16/ 2-Mbit x 8) FlashFileTM MEMORY 16-Mbit FlashFileTM MEMORY 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY 16兆位兆位× 16兆位× 8FlashFileTM记忆
|
Intel Corporation Intel Corp. Intel, Corp.
|
SST39VF1601 SST39VF6401-70-4C-B1K SST39VF6402-70-4 |
16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
|
http://
|