| PART |
Description |
Maker |
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
| M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| HYE25L128160AC-8 HYB25L128160AC-75 |
128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES 128 - Mbit同步低功率DRAMCHIPSIZE套票
|
Infineon Technologies A...
Infineon Technologies AG
|
| M36P0R8070E0 |
256 Mbit Flash memory 128 Mbit (burst) PSRAM
|
Numonyx
|
| M36L0R7040B0 M36L0R7040T0 |
128 Mbit Flash Memory and 16 Mbit PSRAM 1.8V Supply Multi-Chip Package
|
STMicroelectronics
|
| JS28F128P33BF70 JS28F128P33TF70A PC28F640P33BF60A |
Numonyx? P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC)
|
Micron Technology
Microchip Technology
Numonyx B.V
|
| CY7C1353G-133AXC CY7C1353G-133AXI CY7C1353G-117AXI |
4-Mbit (256K x 18) Flow-through SRAM with NoBL(TM) Architecture
4-Mbit (256K x 18) Flow-through SRAM with NoBL⑩ Architecture
4-Mbit (256K x 18) Flow-through SRAM with NoBL Architecture
|
CYPRESS[Cypress Semiconductor]
|
| IS75V16F128GS32-7065BI |
3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
|
Integrated Silicon Solution Inc
|
| IS75V16F128GS32 IS75V16F128GS32-7065BI |
3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| M36LLR8760 M36L0R7050 M36L0R7050B0ZAQE M36L0R7050B |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package 128兆位（多银行，多层次，突发）闪存32兆位00万16）移动存储芯片，1.8V电源多芯片封
CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014
ER 23C 16 12 8 4 SKT RECP WALL
CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014
128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM
From old datasheet system
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
